METHOD FOR PRODUCING III GROUP METAL NITRIDE THIN FILM AND III GROUP METAL NITRIDE-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for using activated nitrogen atom, capable of solving problems in the case using conventional ammonia as nitrogen feed source in MOCVD method (organometallic compound chemical vapor deposition method) for growing a III group metal nitride thin film on a substrate. SOLUTION: This method for producing a III group metal nitride thin film comprises carrying out chemical vapor deposition of activated nitrogen atom, especially activated nitrogen atom generated by dielectric barrier discharge and one or more kinds of organometallic compounds of III group metals on a substrate heated to 700 deg.C to 1,000 which is a temperature lower than that in conventional MOCVS method.