发明名称 APPARATUS FOR ELECTRO CHEMICAL DEPOSITION OF COPPER METALLIZATION WITH THE CAPABILITY OF IN-SITU THERMAL ANNEALING
摘要 The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station. <IMAGE>
申请公布号 SG82070(A1) 申请公布日期 2001.07.24
申请号 SG20000001050 申请日期 2000.02.25
申请人 APPLIED MATERIALS, INC. 发明人 ROBIN CHEUNG;ASHOK K. SINHA;AVI TEPMAN;DAN CARL
分类号 B65G49/07;C25D7/12;H01L21/00;H01L21/02;H01L21/288;(IPC1-7):C25D3/38 主分类号 B65G49/07
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