发明名称 |
Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base |
摘要 |
The collector of a vertical bipolar transistor is selectively doped by a first implantation of dopants before the epitaxy of the base, and is selectivly doped by a second implantation of dopants through the epitaxial base. Two implanted zones with different widths are obtained. The base of the vertical bipolar transistor is thinned and the collector resistance is optimized.
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申请公布号 |
US6265275(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990323525 |
申请日期 |
1999.06.01 |
申请人 |
STMICROELECTRONICS S.A.;COMMISSARIAT ENERGIE ATOMIQUE |
发明人 |
MARTY MICHEL;CHANTRE ALAIN;SCHWARTZMANN THIERRY |
分类号 |
H01L29/73;H01L21/265;H01L21/331;H01L29/08;H01L29/165;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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