发明名称 |
Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells |
摘要 |
A Partially Non-Volatile Dynamic Random Access Memory (PNDRAM) uses a DRAM array formed by a plurality of single transistor (1T) cells or two transistor (2T) cells. The cells are electrically programmable as a non-volatile memory. This results in a single chip design featuring both, a dynamic random access memory (DRAM) and an electrically programmable-read-only-memory (EPROM). The DRAM and the EPROM integrated in the PNDRAM can be easily reconfigured at any time, whether during manufacturing or in the field. The PNDRAM has multiple applications such as combining a main memory with ID, BIOS, or operating system information in a single chip.
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申请公布号 |
US6266272(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990364841 |
申请日期 |
1999.07.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIRIHATA TOSHIAKI;STORASKA DANIEL;NARAYAN CHANDRASEKHAR;TONTI WILLIAM;BERTIN CLAUDE;VAN HEEL NICK |
分类号 |
G11C14/00;G11C11/00;G11C16/02;G11C16/04;G11C29/04;H01L21/8246;H01L27/112;(IPC1-7):G11C14/50 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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