发明名称 |
Method for detecting and characterizing plasma-etch induced damage in an integrated circuit |
摘要 |
Characterization of plasma-induced damage in semiconductor manufacturing has long been considered unimportant because the damage had no discernible effect on circuit performance. With increasing transistor counts on an integrated circuit, the damage-induced parasitics are becoming increasingly important. Electrical characterization of such effects provides a far more sensitive method for determining the extent of damage and the effectiveness of efforts to repair the damage. A measurement of diode leakage current through a plasma-etch effect test diode which is formed completely within an active device region, removed from field oxide regions quantifies the extent of damage created by a plasma and the effectiveness of a repair technique that may be applied to the process.
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申请公布号 |
US6265729(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990277338 |
申请日期 |
1999.03.26 |
申请人 |
AMERICAN MICROSYSTEMS, INC. |
发明人 |
NELSON MARK MICHAEL;DESHMUKH SUBHASH MADHUKAR |
分类号 |
H01L21/66;H01L23/544;(IPC1-7):H01L23/58;H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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