| 摘要 |
An object of the invention is to provide a semiconductor memory which is not susceptible to the change of a threshold value caused by variations in a fabricating process. The semiconductor memory comprises a memory cell part, a voltage generation circuit for generating a substrate voltage of the memory cell part, a threshold value detection circuit for outputting threshold value detection signals in response to a threshold value of a transistor formed on the memory cell part, and a voltage detection circuit for detecting the substrate voltage generated by the voltage generation circuit, outputting a voltage detection signal at a given voltage in response to the threshold value detection signals to stop the operation of the voltage generation circuit.
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