发明名称 |
Top corner rounding for shallow trench isolation |
摘要 |
A process for top-corner rounding at the rim of shallow trenches of the type used for STI is described. This is achieved by first forming the trench using a silicon nitride hard mask having a layer of pad oxide between itself and the silicon surface. The silicon nitride is then briefly and selectively etched so that it pulls back from over the trench rim and exposes a small amount of the underlying pad oxide. Rounding by means of sputtering is then effected with the pad oxide serving to protect the underlying silicon until just before rounding takes place. The result is smoothly rounded corners free of facets and overhangs.
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申请公布号 |
US6265317(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US20010756529 |
申请日期 |
2001.01.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHIU HSIEN-KUANG;CHEN FANG-CHENG;TAO HUN-JAN |
分类号 |
H01L21/033;H01L21/3065;H01L21/311;H01L21/316;H01L21/318;H01L21/762;(IPC1-7):H01L21/302;H01L21/425 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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