发明名称 |
Controlling an etching process of multiple layers based upon thickness ratio of the dielectric layers |
摘要 |
The present invention is directed to a method of forming conductive interconnections in an integrated circuit device. In one embodiment, the method comprises forming a dielectric stack comprised of multiple layers, and determining a thickness ratio of the layers of the stack. The method further comprises determining an etching process to be performed on the dielectric stack to define an opening for a conductive interconnection based upon the determined thickness ration, and performing the determined etch process on the dielectric stack.
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申请公布号 |
US6265304(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990412215 |
申请日期 |
1999.10.05 |
申请人 |
ADVANCED MICRON DEVICES, INC. |
发明人 |
CAMPBELL WILLIAM JARRETT |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/476;H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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