发明名称 |
Circuit and technique for smear subtraction in CCD image sensors |
摘要 |
The image sensing device includes an image sensing area 22 having an antiblooming drain structure; and a frame memory area 24 coupled to the image sensing area 22 for storing charge from the image sensing area, wherein during charge integration, the antiblooming drain is biased at a first level, and during charge transfer to memory, the antiblooming drain is biased at a second level such that the image sensing area 22 will have a higher charge capacity than during the charge integration.
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申请公布号 |
US6266087(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19950411033 |
申请日期 |
1995.03.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HYNECEK JAROSLAV;FRITZ MATTHEW J. |
分类号 |
H01L27/148;H04N5/217;H04N5/335;(IPC1-7):H04N3/14;H04N9/64 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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