| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical-mechanical polishing method without generating scratches, capable of quickly obtaining global flatness and reducing slurry consumption in a chemical-mechanical polishing method for smoothing the insulating layer or a surface of wiring formed on a semiconductor wafer by polishing. SOLUTION: In polishing a semiconductor wafer with a polishing pad of 80 degree or more in micro rubber A hardness containing a polymer polymerized for polyurethane and vinyl compounds and having closed cells mounted on the polishing surface plate of a device for chemically an mechanically polishing the semiconductor wafer, the chemical-mechanical polishing method comprises slurry supply quantity determined in the range of 0.005 cc to 0.05 cc per cm2 of a polishing pad. |
