| 摘要 |
The present invention relates to flash memory cell and fabricating method therefor, including a semiconductor substrate having first typed impurity, a first gate insulating layer on a first certain part of the semiconductor substrate, a buried insulating layer on a second certain part of the semiconductor substrate, the buried insulating layer being connected to the first gate insulating layer, a floating gate on the first gate insulating layer wherein the floating gate extends on and is overlapped with the buried insulating layer in part, a second gate insulating layer on the floating gate, a third gate insulating layer at a lateral surface of the floating gate, a control gate on the second gate insulating layer wherein one side of the control gate corresponds to that of the floating gate and the other side of the control gate does not correspond to that of the control gate and the one side of said control gate overlaps over the buried insulating layer, a fourth gate insulating layer on the control gate, an insulating sidewall spacer at a lateral surface of the control gate and a lateral surface of the fourth gate insulating layer wherein the insulating sidewall spacer lies over the buried insulating layer, an erasing gate on the buried insulating layer wherein the erasing gate is separated electrically from the floating gate and said control gate by the third gate insulating layer the insulating sidewall spacer the fourth gate insulating layer, and a source region under both buried insulating layer and one side of the floating gate wherein the source region has second typed impurity.
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