Method for producing luminous structures on silicon substrate

摘要

The invention relates to a method for producing light-emitting structures on silicon substrate. A defined area of the pre-doped silicon substrate is contradoped by means of focussed ion implantation. A lateral npn or pnp junction region is produced by over-compensating the original charge carrier density. Light is emitted in the reverse-biased pn or np junction region when said region is flown through by a current. Masking steps can be totally avoided by using focussed ion implantation for producing light-emitting structures.