发明名称 |
Selective growth process for group III-nitride-based semiconductors |
摘要 |
A method of forming selected Group III-nitride regions uses a masking layer to cause differential growth between single crystal Group III-nitride material and polycrystalline Group III-nitride material. The epitaxial process is chosen to provide vertical growth so as to allow for replication of the mask edges at the defined limits for the selected regions. By using an etchant that is selective between polycrystalline and single crystal Group III-nitride material, the polycrystalline material (that grew over the mask layer) can be removed, leaving only the single crystal Group III-nitride (that grew over the exposed substrate material).
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申请公布号 |
US6265322(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990399655 |
申请日期 |
1999.09.21 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
ANSELM KLAUS ALEXANDER;CHO ALFRED YI;CHU SUNG-NEE GEORGE |
分类号 |
C30B29/38;H01L21/20;H01L21/205;H01L21/308;H01L21/318;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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