| 摘要 |
1,160,301. Semi-conductor devices. RADIO CORPORATION OF AMERICA. 9 Aug., 1966 [29 Nov., 1965], No. 35700/66. Heading H1K. [Also in Division C7] A semi-conductive layer of single crystalline Si is deposited on a monocrystalline Al 2 O 3 substrate by heating the substrate to about 1150‹ C. in a silane containing atmosphere and then heating the coated substrate in a non- reactive atmosphere, e.g. hydrogen, to a temperature of at least 1250‹ C. but below the melting point of the Si, preferably 1335- 1400‹ C. The 22#43 crystal face of an Al 2 O 3 disc is preferably coated and the disc is heated in a furnace 11 on a Si susceptor 34 to 1250‹ C. in H 2 after first flushing with He. The substrate is then cooled and maintained at about 1150‹ C. while a. mixture of silane and H 2 is passed through the furnace to deposit an Si coating 1-50 microns thick. The coated substrate is then heated in H 2 or an inert gas at 1335-1400‹ C. A P-type Si layer may be produced by introducing diborane with the silane or an N-type Si by introducing phosphine with the silane.
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