发明名称 Halbleiteranordnung,insbesondere Transistoranordnung
摘要 A semiconductor device composed of a semiconductor body having two zones which define a pn-junction between them, which device includes, for improving the high frequency characteristics of the device, a layer of insulating material disposed within the semiconductor body and separating the two zones from one another in the region surrounding the pn-junction.
申请公布号 DE1439760(A1) 申请公布日期 1969.08.07
申请号 DE1964T027659 申请日期 1964.12.19
申请人 TELEFUNKEN PATENTVERWERTUNGSGESELLSCHAFT MBH 发明人 HANS-JUERGEN SCHUETZE,DIPL.-PHYS.DR.;HENNINGS,DIPL.-PHYS.DR.
分类号 H01L21/00;H01L21/22;H01L21/316;H01L23/31;H01L27/082;H01L29/00;H01L29/73 主分类号 H01L21/00
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