发明名称 |
Method for forming inter-metal dielectrics |
摘要 |
An improved method for forming inter-metal dielectrics (IMD) over a semiconductor substrate is provided, wherein a conductive line is formed thereon. A first dielectric layer is formed over the conductive line. A second dielectric layer is formed on the first dielectric layer by a spin-on glass method. A curing treatment with an electron beam having a low energy and a high dosage is performed to cure an upper portion of the second dielectric layer so that a cured third dielectric layer is formed on the second dielectric layer. A fourth dielectric layer is formed on the cured third dielectric layer. A chemical-mechanical polishing process is performed using the cured dielectric layer as a stop layer. A cap layer is formed on the fourth dielectric layer.
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申请公布号 |
US6265298(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990249882 |
申请日期 |
1999.02.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN SHUENN-JENG;HSIEH CHING-HSING;HSU CHIH-CHING |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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