发明名称 |
Method for determining crack limit of film deposited on semiconductor wafer |
摘要 |
A method for determining a crack limit of a target film deposited on a wafer in production after a post annealing procedure is disclosed. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. The test results on bare wafers can be applied to the production wafers to prevent from film cracking and/or inspect instrumental conditions.
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申请公布号 |
US6265233(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US19990326096 |
申请日期 |
1999.06.04 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
CHU JASON C. S.;LIN JERRY C. S.;HUNG ROGER TUN-FU;WU CHIH-TA |
分类号 |
H01L21/316;H01L23/544;(IPC1-7):G01R31/26 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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