发明名称 |
Solventless, resistless direct dielectric patterning |
摘要 |
Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%. Also disclosed is a microelectronic structure comprising a substrate; a plurality of transistors formed on the substrate; and a plurality of conductive features formed within a dielectric pattern, wherein the plurality of conductive features include at least one two-dimensional feature having a dimensional tolerance more precise than 7%. |
申请公布号 |
AU3279001(A) |
申请公布日期 |
2001.07.24 |
申请号 |
AU20010032790 |
申请日期 |
2001.01.11 |
申请人 |
SEMICONDUCTOR RESEARCH CORP.;CORNELL RESEARCH FOUNDATION INC.;MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
KAREN K. GLEASON;CHRISTOPHER OBER;DANIEL HERR |
分类号 |
G03F7/16;G03F7/32;G03F7/36 |
主分类号 |
G03F7/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|