发明名称 |
DIAMOND SEMICONDUCTOR AND METHOD FOR THE FABRICATION THEREOF |
摘要 |
A diamond semiconductor (20) includes a high-quality thin diamond film layer (22) with few crystal defects and few impurities, implanted with ions of dopant elements and controllable in conductivity determined by a kind and a concentration of the dopant elements. The diamond semiconductor is fabricated by a method including the step of implanting ions of dopant elements into a high-quality thin diamond film layer with few crystal defects and few impurities under conditions that can attain given distribution of concentrations of the dopant elements and with the high-quality thin diamond film layer kept to a temperature in accordance with the conditions so as not to be graphitized, to thereby enable the diamond semiconductor to have conductivity determined by a kind and a concentration of the dopant elements. <IMAGE> |
申请公布号 |
IL137336(D0) |
申请公布日期 |
2001.07.24 |
申请号 |
IL20000137336 |
申请日期 |
2000.07.17 |
申请人 |
AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE & INDUSTRY;JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
发明人 |
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分类号 |
C23C16/27;C30B29/04;H01L21/04;H01L21/265;H01L29/16;H01L33/34;(IPC1-7):H01L |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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