发明名称 |
HIGH CAPACITIVE CHIP CAPACITOR |
摘要 |
PURPOSE: A high capacitive chip capacitor is provided to increase the capacitance of the capacitor by increasing the surface area of the capacitor by forming a plurality of grid type trenches in a lower electrode of the capacitor. CONSTITUTION: A photoresist layer on a semiconductor substrate(100) is patterned into grid shape. That, photoresist corresponding to wrap and weft lines is removed and photoresist corresponding to respective meshes remains to act as etching masks. The semiconductor substrate(100) is etched using the remaining photoresist as masks to form grid type trenches(110) in the substrate(100). Preferably, the gaps between the trenches(110) are constant. Then, the first conductive layer(120) is coated on a front surface of the semiconductor substrate(100) including the trenches(110).
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申请公布号 |
KR20010068825(A) |
申请公布日期 |
2001.07.23 |
申请号 |
KR20000000939 |
申请日期 |
2000.01.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, IN JEONG;YOO, GWANG DONG |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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主权项 |
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地址 |
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