METHOD FOR FORMING TUNGSTEN CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a tungsten plug of a semiconductor device is provided to prevent a volcano phenomenon by using a barrier metal and a CVD(Chemical Mechanical Deposition) tungsten to form a tungsten plug. CONSTITUTION: A contact hole(110) is formed on an insulating layer(200). A titanium layer(300) is formed on the contact hole(110). A titanium nitride layer(300) is formed on the titanium layer(200). A fine tungsten layer(500) is formed on the titanium nitride layer(400) by using a CMD method. The fine tungsten layer(500) has a thickness less than 50 angstrom. A thermal process for the structure formed with the fine tungsten layer(500) is performed. The contact hole(110) is filled by laminating the tungsten layer.