METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to obtain a high capacitance by maximizing a surface area of a lower electrode of a capacitor. CONSTITUTION: An isolation region(22) is formed on a semiconductor substrate(21). A cap insulating layer(25) covers a gate oxide layer(23) and a gate electrode(24) formed on the semiconductor substrate(21). An insulating layer(26) is deposited on the whole structure. A node contact hole is formed by a photo etching process. The node contact hole is filled by the polysilicons(27,28). An oxide layer(29) is formed thereon. The first node electrode is patterned by etching the polysilicons(27,28). The polysilicon(28) is exposed by etching the oxide layer. The second node electrode is formed by growing a GeSi polysilicon(30). The remaining oxide layer(30) is removed. A dielectric layer(31) is formed thereon. A plate electrode is formed by using a polysilicon(32).