发明名称 |
INPUT BUFFER OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: An input buffer is provided to reduce power consumption, reduce noises, reduce a signal delay in an input portion, and reduce a difference between hold time and set-up time of input data. CONSTITUTION: The input buffer(205) includes a differential amplifier(231), a sense amplifier(221) and another second sense amplifier(222). The input buffer converts the voltage level of external data(DB) of a semiconductor memory device into the voltage level appropriate for an internal signal. The differential amplifier converts the external data into a predetermined voltage level. The sense amplifier connects with the differential amplifier and amplifies the output signal(OUT) of the differential amplifier in synchronization with a rising edge of a clock signal(CLK). The another sense amplifier connects with the differential amplifier and amplifies the output signal of the differential amplifier in synchronization with a falling edge of the clock signal.
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申请公布号 |
KR20010068246(A) |
申请公布日期 |
2001.07.23 |
申请号 |
KR20000000056 |
申请日期 |
2000.01.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN HYEON;LIM, SEONG MIN |
分类号 |
G11C7/10;(IPC1-7):G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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