发明名称 INPUT BUFFER OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An input buffer is provided to reduce power consumption, reduce noises, reduce a signal delay in an input portion, and reduce a difference between hold time and set-up time of input data. CONSTITUTION: The input buffer(205) includes a differential amplifier(231), a sense amplifier(221) and another second sense amplifier(222). The input buffer converts the voltage level of external data(DB) of a semiconductor memory device into the voltage level appropriate for an internal signal. The differential amplifier converts the external data into a predetermined voltage level. The sense amplifier connects with the differential amplifier and amplifies the output signal(OUT) of the differential amplifier in synchronization with a rising edge of a clock signal(CLK). The another sense amplifier connects with the differential amplifier and amplifies the output signal of the differential amplifier in synchronization with a falling edge of the clock signal.
申请公布号 KR20010068246(A) 申请公布日期 2001.07.23
申请号 KR20000000056 申请日期 2000.01.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN HYEON;LIM, SEONG MIN
分类号 G11C7/10;(IPC1-7):G11C7/10 主分类号 G11C7/10
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