SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to prevent a dishing phenomenon of a FOX(Flowable OXide) and form a high density current on a metal pad. CONSTITUTION: A metal line(52) is formed on one part of a semiconductor substrate(10). A metal pad(51) is formed on the other part of the semiconductor substrate(10). FOX layers(53,54) are formed on the metal line(52) and the metal pad(51) by an SOG(Spin On Glass) method. An interlayer dielectric is formed on the semiconductor substrate(10) including the metal line(52) and the metal pad(51). A via metal(59) within a via hole is connected electrically with the metal line(52) and metal pad(51). An upper metal is formed on the interlayer dielectric in order to connect electrically the metal line(52) with the metal pad(51).