| 摘要 |
PURPOSE: A fabricating method of a semiconductor device is provided to be capable of integrating a CMOS transistor and a photo diode in one substrate. CONSTITUTION: At first, an epitaxial layer(12) is formed on a P type semiconductor substrate(11) and then N/P type conductive wells(15,17) spaced apart from each other are selectively formed on the epitaxial layer. Then, isolation areas(20) are formed boundaries between diode and transistor areas and between the conductive wells, and then a gate oxide(21) is formed on the conductive wells. Next, gate electrodes are selectively formed on the conductive wells, N/P type source/drain(24,25) are respectively formed in the wells by sequentially implanting P/N impurity ions, and a heavily doped N type conductive area(23) is formed by implanting the N type impurity ions into the diode area.
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