METHOD FOR FORMING SELF ALIGNED CONTACT PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a self aligned contact pad of a semiconductor device is provided to simplify a process by growing a self aligned contact pad and reduce a damage on a semiconductor substrate when the self aligned contact pad is formed. CONSTITUTION: A gate conductive layer and a capping layer(308) are formed on a semiconductor substrate and patterned to form a gate electrode(306). A gate electrode protection layer(310) is formed on the semiconductor substrate including the gate electrode(306). An interlayer dielectric(312) is formed on the gate electrode protection layer. The interlayer dielectric(312) is patterned. The gate electrode protection layer(310) exposed at this time is etched to form a gate spacer. At the same time, a contact pad opening is formed so as for at least one of active regions to be exposed. The semiconductor substrate exposed on a lower part of the contact pad opening is selectively grown to form a contact pad conductive layer. The contact pad conductive player is formed by an epitaxial growth method. The contact pad conductive layer may be formed by a molecular beam epitaxy(MBE).