| 摘要 |
PURPOSE: A nitride luminous element is provided to enhance luminous efficiency and quality of a nitride luminous element. CONSTITUTION: A buffer layer, an n-type contact layer, a crack prevent layer, an n-type clad layer, an n-type super lattice limit layer, an n-type light guide layer, an active layer, a p-type light guide layer, a p-type supper lattice limit layer, a p-type clad layer and a p-type contact layer are consecutively laminated on a board. An energy band gap of the light guide layer is the same as or larger than that of the active layer. The supper lattice limit layer is larger than in the energy band gap than the light guide layer. If necessary, the crack prevent layer, the n-type clad layer, the n-type super lattice limit layer are left out or the p-type clad layer, the p-type super lattice limit layer are left out. In order to apply a current, an n-type electrode is formed on an exposed surface of the n-type contact layer. A p-type electrode is partially formed on an exposed surface of the p-type contact layer and the current limit layer. The board is materialized of ZnS, ZnO, GaAs, GaN, etc., which are suitable for growth of a nitride semiconductor. |
