| 摘要 |
A photoemissive surface (10) includes a p-type silicon substrate (11), a porous silicon area (12) formed on the p-type silicon substrate (11), an Au electrode (13) formed on the porous silicon area (12), and an ohmic electrode (14) formed on the p-type silicon substrate (11) on the opposite side of the porous silicon area (12). The photoemissive surface consists of a p-type silicon substrate including a porous silicon area of a new material. <The use of a p-type silicon substrate prevents cold emission, thus providing a low-noise photoemissive surface. |
