| 摘要 |
PURPOSE: A semiconductor device is provided to improve integration of an analog circuit by using a capacitor with a miller effect without increasing size of an NPN transistor. CONSTITUTION: The first semiconductor substrate is formed on an active region and has the second conductive epitaxial layer of low density for a collector. The first conductive base region is divided into two regions, namely one region of low density and the other region of high density, the two regions which are formed on a part of the epitaxial layer of the active region. The second conductive sink region is formed on other part of the epitaxial layer of the active region so as to be electrically connected to a buried layer. The second conductive emitter region of high density is formed within the base region of low density. The second conductive tub is overlapped on the sink region, larger than the sink region and formed on the epitaxial layer with a lower depth than the sink region. The second conductive diffuse region is electrically contacted with a collector, and partially expended to the base region from an upper side of the sink region so as to function as a lower electrode of a capacitor for miller effect. An interlayer dielectric is thinly formed on a part of the second conductive diffuse region which acts as the lower electrode of the capacitor for a dielectric film of the capacitor, and has a contact window for exposing the emitter region, the base region and the collector region. An emitter electrode, a base electrode and a collector electrode are electrically connected through each contact window in the emitter are, the base region and the collector region. The base electrode is integrally connected to the base electrode and forms an upper electrode of the capacitor which is formed on the thin interlayer dielectric.
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