| 摘要 |
There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0.5<=RCu/RBM<=2, and the polishing rate ratio (RCu/RIn) of the copper film (RCu) and the insulating film (RIn) is such that 0.5<=RCu/RIn<=2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0<RCu/RBM<=5, and the polishing rate ratio (RIn/RBM) of the insulating film (RIn) and the barrier metal film (RBM) is such that 0<RIn/RBM<=2. The CMP process of the invention is characterized by using these aqueous dispersions for CMP in the second stage of two-stage polishing, in the second stage of three-stage polishing or in the third stage of three-stage polishing.
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