发明名称 |
Circuit for temperature stable bias and reference voltage source has n-MOS and p-MOS arranged in pairs to form two opposed current mirrors, further p-MOS transistor in one current path |
摘要 |
The circuit has two n-MOS transistors (M1,M2) with two p-MOS transistors (M3,M4) and two further n-MOS transistors (M6,M7) in pairs to form two opposed current mirrors and a further p-MOS transistor (M5) is connected in one current path. A working point is set so that the transistors operate in the threshold and saturation regions of their current-voltage characteristic and the further transistor operates in the threshold and linear regions.
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申请公布号 |
DE19956123(A1) |
申请公布日期 |
2001.07.19 |
申请号 |
DE19991056123 |
申请日期 |
1999.11.13 |
申请人 |
INSTITUT FUER HALBLEITERPHYSIK FRANKFURT (ODER) GMBH |
发明人 |
KLATT, JOERG |
分类号 |
G05F3/26;(IPC1-7):G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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