发明名称 Circuit for temperature stable bias and reference voltage source has n-MOS and p-MOS arranged in pairs to form two opposed current mirrors, further p-MOS transistor in one current path
摘要 The circuit has two n-MOS transistors (M1,M2) with two p-MOS transistors (M3,M4) and two further n-MOS transistors (M6,M7) in pairs to form two opposed current mirrors and a further p-MOS transistor (M5) is connected in one current path. A working point is set so that the transistors operate in the threshold and saturation regions of their current-voltage characteristic and the further transistor operates in the threshold and linear regions.
申请公布号 DE19956123(A1) 申请公布日期 2001.07.19
申请号 DE19991056123 申请日期 1999.11.13
申请人 INSTITUT FUER HALBLEITERPHYSIK FRANKFURT (ODER) GMBH 发明人 KLATT, JOERG
分类号 G05F3/26;(IPC1-7):G05F3/26 主分类号 G05F3/26
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