发明名称 MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To evaluate the state of a polysilicon film which is formed by excimer laser annealing an amorphous silicon film. SOLUTION: Related to the manufacturing process for an bottom-gate TFT, a polysilicon film is formed, and then its quality is decided. At formation of the polysilicon film by annealing an amorphous silicon film, linearity and periodicity appear in the spatial structure in the film surface of formed polysilicon film, according to the energy giving to the amorphous silicon at annealing. After the linearity and periodicity are image-processed, the linearity and periodicity of the image are made into numerical values utilizing an auto-correlating function. Then, the auto-correlating value of the surface image of polysilicon film in an S/D region as well as that on a gate electrode are acquired, and both numerical results is utilized to decide the quality of the polysilicon film.
申请公布号 JP2001196593(A) 申请公布日期 2001.07.19
申请号 JP20000005996 申请日期 2000.01.07
申请人 SONY CORP 发明人 WADA HIROYUKI;HIRATA YOSHIMI;TAGUCHI AYUMI;TATSUKI KOICHI;UMETSU NOBUHIKO;KUBOTA SHIGEO;ABE TETSUO;OOSHIMA AKIFUMI;HATTORI TADASHI;TAKATOKU MASATO;SUGANO YUKIYASU
分类号 H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
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