| 摘要 |
A method of forming a bottom electrode of a capacitor in a dynamic random access memory cell. The bottom electrode of the capacitor is formed on a semiconductor wafer, the semiconductor wafer includes a silicon substrate, and a first dielectric layer positioned on the silicon substrate having a contact hole extending down to the silicon substrate. The method includes the following steps: a first polysilicon layer is formed in the contact hole as a conductive plug. A second dielectric layer is then formed on the first dielectric layer. A vertical opening is formed in the second dielectric layer that extends down to the contact hole, and a pillar-shaped second polysilicon layer is formed in the opening, that the bottom end of the second polysilicon layer is electrically connected to the first polysilicon layer in the contact hole. Finally, a predetermined thickness of the second dielectric layer is removed so that the top end of the second polysilicon layer protrudes from the second dielectric layer, the top end of the second polysilicon being used as the bottom electrode of the capacitor. The bottom end of the second polysilicon layer inlayed within the vertical opening of the second dielectric layer fixes the bottom electrode of the capacitor on the semiconductor wafer so as to prevent the bottom electrode of the capacitor from collapsing during further processing.
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