| 摘要 |
<p>A dual spin-valve magnetoresistive sensor (24) includes a free ferromagnetic layer (30) and first and second nonmagnetic conductive spacers (32, 34) adjacent to opposing first and second surfaces of the free layer, respectively. A pinned ferromagnetic layer consisting of a single-film ferromagnetic layer (36) is adjacent to the first spacer and a laminated pinned ferromagnetic structure (38) is adjacent to the second spacer. The laminated structure includes first and second pinned ferromagnetic films (40, 44) separated by a film (42) that provides antiferromagnetic coupling. First and second antiferromagnetic layers (46, 48) can be provided adjacent to the pinned ferromagnetic layer and the laminated pinned structure, respectively. The sensor can be incorporated, for example, into a magnetic storage system.</p> |
