发明名称 PHOTOELECTRIC EMISSION SURFACE AND PHOTODETECTOR UTILIZING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a photoelectric emission surface and a photodetector utilizing the same, which comprises a Si substrate having PS area and is of a low noise for practical use. SOLUTION: This photodetector 100 comprises a photoelectron emission surface having a p-type Si substrate 11, a porous silicon area 12 formed on the p-type Si substrate, an Au electrode 13 formed on the porous silicon area 12, and an ohmic electrode 14 formed on the p-type Si substrate opposite to the porous silicon area 12 formed on the p-type Si substrate; and an anode 15. The photoelectron emission surface and the photodetector can be constituted by the p-type Si substrate having the porous silicon area of new material and structure. Further, by the p-type Si substrate, a low noise of photoelectron emission surface can be obtained since cold electron emission is not generated.</p>
申请公布号 JP2001195974(A) 申请公布日期 2001.07.19
申请号 JP20000006674 申请日期 2000.01.14
申请人 HAMAMATSU PHOTONICS KK 发明人 KOSHIDA NOBUYOSHI
分类号 H01J9/12;G01J1/02;H01J1/34;H01J40/06;H01L31/09;(IPC1-7):H01J1/34 主分类号 H01J9/12
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