| 摘要 |
A BICMOS integrated circuit is formed with CMOS transistors on an SOI substrate in a silicon layer having a standard thickness of 0.1 mum to 0.2 mum and with Bipolar SiGe transistors formed in an epitaxial layer nominally 0.5 mum thick. The CMOS transistors are formed first with standard processing, then covered with an insulating film. The insulating film is stripped in the bipolar areas and an epitaxial SiGe layer is deposited on the Si substrate. The bipolar transistors are formed using the SiGe epi layer for the base and having an encapsulated structure for device isolation using shallow isolation trenches and the buried oxide.
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