| 摘要 |
<p>A method and apparatus for high pressure drying of semiconductor wafers includes the insertion of a wafer (50) into an open vessel (52), the immersion of the wafer in a liquid (56), pressure sealing of the vessel, pressurization of the vessel with an inert gas (59), and then the controlled draining of the liquid using a moveable drain (54) that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic (222) waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.</p> |
