| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for improving the reliability of a semiconductor device, such as a thin-film transistor(TFT) superior in characteristics/reliability. SOLUTION: Related to the process of forming a semiconductor device such as a thin-film transistor on an insulating film, after a coat whose main component is aluminum nitride is formed, a semiconductor device, such as TFT is formed directly over it or formed with a film whose main component is silicon oxide film, etc., in-between. A thin-film integrated circuit, where the semiconductor device is integrated applied especially to an active matrix type liquid-crystal display, is provided.</p> |
