METHOD FOR MEASURING IMPURITY ON SURFACE OF SEMICONDUCTOR WAFER AND APPARATUS FOR RECOVERING THE IMPURITY

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring impurities on the surface of a semiconductor wafer capable of more accurately analyzing the impurities in the measurement of the impurities on the surface of the wafer by an atomic absorption spectrometry using a vapor-phase decomposition method. SOLUTION: The method for measuring the impurities on the surface of the semiconductor wafer comprises a vapor-phase decomposing step for decomposing an oxide film or a nitride film on the surface of the wafer by an acid vapor incorporating a hydrofluoric acid, a liquid droplet scanning step if inputting a product generated by a decomposition reaction into droplets, a liquid droplet drying step of positioning and drying the obtained product-containing droplets at a predetermined position of the surface of the wafer, an analyzing sample preparing step having a hydrofluoric acid of a concentration of 1 wt.% or less by dissolving the retained residue in a dissolving liquid, and an impurity analyzing step of analyzing the impurities by an atomic absorption analysis for the sample.