发明名称 Solid-state imaging device
摘要 A current signal corresponding to the amount of incident light detected by a photoelectric conversion device 13 is inputted to and integrated by an integrator circuit 30, whereby a voltage signal is outputted from the integrator circuit 30. When a switch 40 is closed, the voltage signal outputted from the integrator circuit 30 is inputted to a capacitor 51 of a variable capacity integrator circuit 50, a change of the voltage signal is inputted to an amplifier 52, and an electric charge corresponding to the change of voltage signal and the capacity value of a variable capacity part 53 flows into the variable capacity part 53. The capacity value of the variable capacity part 53 is controlled by a comparator 60 and a capacity control section 70 such that the value of integrated signal outputted from the variable capacity integrator circuit 50 coincide with a reference value. The capacity control section 70 outputs a first digital signal corresponding to the capacity value of the variable capacity part 53. As a consequence, a solid-state imaging device which is excellent in S/N ratio, yields no offset errors even when its amplifier have offset fluctuations, and has a small circuit scale is obtained.
申请公布号 US2001008422(A1) 申请公布日期 2001.07.19
申请号 US20000725251 申请日期 2000.11.29
申请人 HAMAMATSU PHOTONICS K.K. 发明人 MIZUNO SEIICHIRO;YAMAKAWA HIROO
分类号 H01L27/146;H04N5/335;H04N5/341;H04N5/357;H04N5/363;H04N5/369;H04N5/374;H04N5/378;(IPC1-7):H04N3/14 主分类号 H01L27/146
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