| 摘要 |
PROBLEM TO BE SOLVED: To form a current blocking layer without increasing the number of epitaxial growth steps, and allow an emitted light to be taken out efficiently. SOLUTION: A p-type SiC region 11 is formed as a current blocking region at a corresponding position on an n-type SiC substrate 10 to the bottom of a p-type Ohmic electrode 21. If the p-type SiC region 11 is thus formed as a current blocking region on the n-type SiC substrate 10, a current blocking region can be formed by e.g. ion implantation without using the epitaxial growth process. This enables the forming of a current blocking layer without increasing the epitaxial growth steps, and emitted lights can be taken out efficiently. |
