| 摘要 |
PROBLEM TO BE SOLVED: To facilitate mounting work, to perform thinning and to improve reliability. SOLUTION: This semiconductor device is provided with an integrated circuit provided with a nonvolatile memory 6, a destruction circuit for eliminating information stored in the memory 6, a thin film battery 3 for supplying power to the destruction circuit, the thin film battery 4 arranged so as to cover an IC chip 2 and the thin film battery 3 and a control circuit 14 for connecting the thin film battery 3 and the destruction circuit at the time of detecting the voltage drop of the thin film battery 4. For the thin film battery 4, at least a part of both of a positive pole collector and a negative pole collector is exposed on the side of the first collector of one of the positive pole collector and the negative pole collector and electric connection with aluminum electrodes 12a and 12b on a silicon substrate is performed so as to make the first collector and the element forming surface of the IC chip 2 face each other. |
