| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the manufacturing method of a polycrystalline semiconductor thin film, which can form the high-quality polycrystalline semiconductor thin film of a comparatively thin film thickness at a low substrate temperature, using a low-cost substrate material and in a short time and enables a reduction in the cost of the thin film. SOLUTION: The manufacturing method of a polycrystalline semiconductor thin film, which is characterized by that a multiplayer thin film laminated by alternately forming microcrystalline silicon thin films 3 or polycrystalline silicon thin films 3 and amorphous silicon thin films 2 is formed on a heterosubstrate 1, such as a glass substrate, and after holes 4 or grooves 5 in the film thickness direction of the multiplayer thin film are provided in the multilayer thin film, metal films 6 consisting of a metallic element, such as Ni, having a catalytic action are respectively formed in contact to the wall surfaces of the holes 4 or the grooves 5, then the films 6 are heat-treated to react the metallic element having the catalytic action to the films 6, whereby the thin films 2 coming into contact with the films 6 are polycrystalline in the plane directions of the thin films 2 and uses a metal catalyst, is provided.</p> |
