| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage that has a layered capacitor, where the capacitance of a capacitor is increased without having to increase the height of a storage node. SOLUTION: A storage node plug 13 projects from the surface of a silicon nitride film 11 in an opening part OP1, storage nodes 14 are provided so that the projecting is covered, and two storage nodes 14 are electrically connected to source and drain regions 71 and 73, respectively. The storage nodes 14 are provided, so that the inner surface of the opening part OP1 is also covered. A dielectric film 15 is provided with the storage nodes 14 being covered. A self plate 16 is provided so that the dielectric film 15 is covered. The storage nodes 14 are provided merely in the opening part OP1, and adjacent storage nodes are isolated electrically from one another. |
