发明名称 MAGNETIC RESISTANCE EFFECTIVE MEMORY, REPRODUCING METHOD FOR INFORMATION STORED IN THE MEMORY, AND ITS REPRODUCING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a MRAM which can be reproduced without applying positive and negative current pulses and to provide a method for reproducing information of this MRAM and a reproducing device using only a positive pulse or a negative pulse. SOLUTION: A magnetic resistance effective memory has a magnetic resistance film consisting of a first magnetic layer, a non-magnetic layer, and a second magnetic layer formed on a substrate, a conductor line for recoding information arranged near this magnetic resistance film or a conductor line for both recording and reproducing information, and a magnetization fixing layer near a magnetic resistance film. The magnetization of a reproduction layer being one of magnetic layers of a magnetic resistance film is oriented in one direction by this magnetization fixing layer, the center of current magnetic field-MR ratio minor loop is shifted, and reproducing information can be performed by only a positive or negative current pulse.
申请公布号 JP2001195878(A) 申请公布日期 2001.07.19
申请号 JP20000281863 申请日期 2000.09.18
申请人 CANON INC 发明人 KOGANEI AKIO
分类号 G11C11/14;G11C11/15;H01F10/26;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/14 主分类号 G11C11/14
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