WIRELESS COMMUNICATION APPARATUS AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress thermal runaway, to enhance the efficiency and to prevent the oscillation. SOLUTION: The wireless communication apparatus that has a high frequency power amplifier module incorporating a single stage amplifier employing a hetero-junction bipolar transistor(HBT) of a multi-finger structure or a multi- stage amplifier consisting of a plurality of HBTs in cascade connection at its sender side output stage and has an antenna connected to the high frequency power amplifier module, is provided with a 1st capacitor and a 1st resistor placed in series between an input terminal of the high frequency power amplifier module and each control finger of the HBT and with a 2nd resistor that is inserted between a control terminal of the high frequency power amplifier module and each control finger of the HBT and connected to a node between the 1st resistor and the 1st capacitor.