发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a crystalline silicon film of superior characteristics. SOLUTION: A glass substrate, an aluminum nitride film on the glass substrate, and a crystalline silicon film on the aluminum nitride film, are provided. Here the aluminum nitride film comprises oxygen of 0.01-20 atom % with respect to nitrogen contained in the aluminum nitride film.
申请公布号 JP2001196600(A) 申请公布日期 2001.07.19
申请号 JP20000347982 申请日期 2000.11.15
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 CHO KOYU
分类号 H01L21/20;H01L21/203;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
代理机构 代理人
主权项
地址