发明名称 |
METHOD AND APPARATUS FOR TEMPERATURE MEASUREMENT, AND THERMAL INFRARED IMAGE SENSOR |
摘要 |
At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.
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申请公布号 |
WO0151902(A1) |
申请公布日期 |
2001.07.19 |
申请号 |
WO2001JP00080 |
申请日期 |
2001.01.11 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION;KIMURA, MITSUTERU |
发明人 |
KIMURA, MITSUTERU |
分类号 |
G01J1/42;G01J1/44;G01J5/20;G01J5/22;G01J5/48;G01K7/01;H01L27/14;H01L27/146;H01L35/00;H04N5/33;(IPC1-7):G01J5/22;H01L37/02 |
主分类号 |
G01J1/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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