| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a waveform of an internal signal starting refresh can be detected, and the waveform can be monitored. SOLUTION: An output circuit 6 of a DRAM (semiconductor memory) is composed substantially of a NAND gate NA1, an AND gate A1, a Pch-Tr2, and a Nch-Tr4, and the circuit is provided with a refresh monitor circuit to which a TMSELF signal (test mode signal) and a int.ZRAS signal (internal signal starting refresh) are inputted. When the TMSELF signal is made H at the time of self-refresh, this refresh monitor circuit outputs a monitor signal having the same waveform as that of the int.ZRAS signal to an output node DQ of an output circuit 6, and can monitor the int.ZRAS signal based on this monitor signal.</p> |
