| 摘要 |
PROBLEM TO BE SOLVED: To enhance the orientational property of a crystalline semiconductor film, which is made of an amorphous semiconductor film using a thermal crystallization method or a laser crystallization method, and moreover, to raise the characteristics of a TFT by using such the crystalline semiconductor film and to reduce an irregularity in the characteristics of the TFT. SOLUTION: The manufacturing method of a semiconductor device comprises a first process that a first insulating film 1102a is formed on a substrate 1101, a second process that an amorphous semiconductor film 1102b is formed on the first insulating film 1102a, a third process that fluorine is implanted in the amorphous semiconductor film 1102b from the surface of the amorphous semiconductor film 1102b, a fourth process that a catalyst element to accelerate a crystallization of the film 1102b is added to the film 1102b in the film 1102b or in contact to the film 1102b, a fifth process that the film 1102b is subjected to a first heating treatment and a crystalline semiconductor film 1103 is formed and a sixth process that the crystalline semiconductor film 1103 is irradiated with laser beam to increase the crustallinity of the crystalline semiconductor film 1103.
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